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| irf130smd05 n IRFN130SMD05 semelab plc. telephone +44(0)1455) 556565. fax +44(0)1455) 552612. e-mail: sales@semelab.co.uk website http://www.semelab.co.uk prelim. 10/00 v gs gate ? source voltage i d continuous drain current @ t case = 25c i d continuous drain current @ t case = 100c i dm pulsed drain current p d power dissipation @ t case = 25c linear derating factor t j , t stg operating and storage temperature range r q jc thermal resistance junction to case 20v 11a 7a 44a 45w 0.36w/c ?55 to 150c 2.8c/w max. mechanical data dimensions in mm (inches) absolute maximum ratings (t case = 25c unless otherwise stated) smd 05 n?channel power mosfet for hi?rel applications features hermetically sealed simple drive requirements lightweight screening options available all leads isolated from case v dss 100v i d(cont) 11a r ds(on) 0.19 w w w w irf130smd05 IRFN130SMD05 pad1 = gate pad 2 drain pad3 = source pad1 = source pad 2 = drain pad3 = gate irf130smd05 n IRFN130SMD05 semelab plc. telephone +44(0)1455) 556565. fax +44(0)1455) 552612. e-mail: sales@semelab.co.uk website http://www.semelab.co.uk prelim. 10/00 parameter test conditions min. typ. max. unit v gs = 0 i d = 1ma reference to 25c i d = 1ma v gs = 10v i d = 7a v gs = 10v i d = 11a v ds = v gs i d = 250 m a v ds 3 15v i ds = 7a v gs = 0 v ds = 0.8bv dss t j = 125c v gs = 20v v gs = ?20v v gs = 0 v ds = 25v f = 1mhz v gs = 10v i d = 11a v ds = 0.5bv dss i d = 11a v ds = 0.5bv dss v dd = 50v i d = 11a r g = 7.5 w i s = 11a t j = 25c v gs = 0 i s = 11a t j = 25c d i / d t 100a/ m sv dd 50v electrical characteristics (t c = 25c unless otherwise stated) drain ? source breakdown voltage temperature coefficient of breakdown voltage static drain ? source on?state resistance gate threshold voltage forward transconductance zero gate voltage drain current forward gate ? source leakage reverse gate ? source leakage input capacitance output capacitance reverse transfer capacitance total gate charge gate ? source charge gate ? drain (?miller?) charge turn?on delay time rise time turn?off delay time fall time continuous source current pulse source current diode forward voltage reverse recovery time reverse recovery charge 100 0.1 0.19 0.22 24 3 25 250 100 -100 650 240 44 12.8 28.5 1.0 6.3 3.8 16.6 30 75 40 45 11 43 1.5 300 3 8.7 8.7 v v/c w v s ( w m a na pf nc nc ns a v ns m c nh bv dss d bv dss d t j r ds(on) v gs(th) g fs i dss i gss i gss c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f i s i sm v sd t rr q rr l d l s static electrical ratings dynamic characteristics source ? drain diode characteristics internal drain inductance (from 6mm down drain lead pad to centre of die) internal source inductance (from 6mm down source lead to centre of source bond pad) package characteristics ( w ) |
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